Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate
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SAM
80NSSC26936816Q 路 NAICS 334413 路 United States (federal) 路 New
- Organization
- NASA SHARED SERVICES CENTER
- Posted
- Jul 6, 2026
- Response due
- Jul 10, 2026 路 3 days left
- Set-aside
- No Set aside used
- Type
- Solicitation
- PSC
- AJ12
Point of contact
- Name
- Monica Wilson
- monica.d.wilson@nasa.gov
- Type
- primary